Job Description

Missions

This postdoctoral position is part of the Carnot project. The objective of this project is to develop an innovative method for the growth and transfer of thick layers of gallium nitride (GaN) onto metal substrates for applications in power electronics.

Activity

The growth of GaN on Al₂O₃ or Si substrates results in highly strained layers containing numerous defects. Therefore, a different approach is proposed, consisting of using hBN/Al₂O₃ pseudo-substrates for the growth of thick GaN layers and their transfer onto metal substrates.
The objective of this position is to study the growth of thick GaN layers by metal organic vapor phase epitaxy (MOVPE) on hBN/Al2O3 pseudo-substrates. The candidate will examine different growth parameters as well as the stress in the epitaxial layers.

Your Profil

Skills

The ideal candidate should hold a PhD in engineering, physics, or materials science, with experience in MOVPE epitaxy and characterization.

Your Work Environment

IRL 2958 Georgia Tech – CNRS
The position is in a sector covered by the protection of scientific and technical potential (PPST) program, and therefore, in accordance with regulations, requires that your arrival be authorized by the competent authority at the MESR.