Job Description

Thesis Topic

This doctoral thesis will be conducted as part of the PEPR DIADEM /Agence Nationale de la Recherche (ANR) program/France.
Hexagonal boron nitride is a new two-dimensional optoelectronic material that is beginning to play an important role in prototypes for next-generation optoelectronic and electronic devices. As it is produced in a MOVPE system during the same epitaxy cycle as GaN-based active devices, h-BN is on the verge of large-scale commercialization. Given the complexity of the MOVPE epitaxy environment, there is a need to deepen our understanding of the complex task of improving the epitaxial quality of h-BN materials. This project aims to significantly improve the quality of hexagonal boron nitride-based optoelectronic materials through advanced characterization and AI-guided optimization of epitaxial growth parameters. The PhD student will work on the various technological building blocks of the epitaxial growth of BN-based heterostructures by MOVPE and will also perform advanced characterization of the materials (XRD, AFM, SEM, PL, CL, and electrical measurements).

Your Work Environment

This thesis will be carried out within the context of IRL 2958 GT-CNRS, a joint international laboratory between the Georgia Institute of Technology and the CNRS. Like any research project, this project is a collaboration with a group of national partners from different fields and will therefore require a certain amount of collaborative work and communication..